安森美贴片mos/MOS管/贴片NVD5867/芯佳供

安森美贴片mos*/进口原装MOS管/芯佳供Datasheets NVD5867NLPCN Design/Specification Mold Compound Update 25/Feb/2015Mold Compound Revision 24/Apr/2015Standard Package ? 2,500Category Discrete Semiconductor ProductsFamily FETs - SingleSeries -Packaging ? Tape & Reel (TR)?FET Type MOSFET N-Channel, Metal OxideFET Feature StandardDrain to Source Voltage (Vdss) 60VCurrent - Continuous Drain (Id) @ 25°C 22A (Tc)Rds On (Max) @ Id, Vgs 39 mOhm @ 11A, 10VVgs(th) (Max) @ Id 2.5V @ 250μAGate Charge (Qg) @ Vgs 15nC @ 10VInput Capacitance (Ciss) @ Vds 675pF @ 25VPower - Max 43WOperating Temperature -55°C ~ 175°C (TJ)Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63Supplier Device Package DPAK-3Online Catalog N-Channel Standard FETsOther Names NVD5867NLT4G-ND